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| FDMS8460 N-Channel Power Trench(R) MOSFET January 2008 FDMS8460 N-Channel Power Trench MOSFET 40V, 49A, 2.2m Features Max rDS(on) = 2.2m at VGS = 10V, ID = 25A Max rDS(on) = 3.0m at VGS = 4.5V, ID = 21.7A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design 100% UIL tested RoHS Compliant (R) tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC - DC Conversion Top Bottom S Pin 1 S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 56 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 40 20 49 167 25 160 864 104 2.5 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 C/W Package Marking and Ordering Information Device Marking FDMS8460 Device FDMS8460 Package Power 56 Reel Size 13'' Tape Width 12 mm Quantity 3000 units (c)2008 Fairchild Semiconductor Corporation FDMS8460 Rev.C 1 www.fairchildsemi.com FDMS8460 N-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VGS = 0V, VDS = 32V, VGS = 20V, VDS = 0V 40 32 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 25A VGS = 4.5V, ID = 21.7A VGS = 10V, ID = 25A, TJ = 125C VDD = 5V, ID = 25A 1.0 1.9 -7.5 2.0 2.6 2.6 137 2.2 3.0 3.3 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 5415 1470 170 1.4 7205 1955 250 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 20V, ID = 25A VDD = 20V, ID = 25A, VGS = 10V, RGEN = 6 19 9 48 7 78 36 15 10 35 19 78 14 110 51 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 25A VGS = 0V, IS = 2.1A IF = 25A, di/dt = 100A/s (Note 2) (Note 2) 0.8 0.7 53 40 1.3 1.2 85 64 V ns nC NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25C, L = 3mH, IAS = 24A, VDD = 40V, VGS = 10V (c)2008 Fairchild Semiconductor Corporation FDMS8460 Rev.C 2 www.fairchildsemi.com FDMS8460 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 160 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4V ID, DRAIN CURRENT (A) VGS = 3.5V VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 5 VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 120 VGS = 10V 4 VGS = 3.5V 3 80 2 VGS = 4V VGS = 4.5V 40 VGS = 3V 1 0.5 0 VGS = 10V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 80 ID, DRAIN CURRENT(A) 120 160 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 10 SOURCE ON-RESISTANCE (m) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 25A VGS = 10V ID = 25A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 8 6 4 2 TJ = 25oC TJ = 125oC rDS(on), DRAIN TO -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 160 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 800 VGS = 0V 100 10 1 0.1 TJ = -55oC TJ = 150oC TJ = 25oC ID, DRAIN CURRENT (A) 120 VDS = 5V TJ = 150oC 80 TJ = 25oC 40 TJ = -55oC 0.01 1E-3 0.0 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDMS8460 Rev.C 3 www.fairchildsemi.com FDMS8460 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 25A VDD = 15V 10000 8 VDD = 20V CAPACITANCE (pF) Ciss 6 4 2 0 0 20 40 Qg, GATE CHARGE(nC) 1000 Coss VDD = 25V 100 f = 1MHz VGS = 0V Crss 60 80 30 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 200 ID, DRAIN CURRENT (A) 40 IAS, AVALANCHE CURRENT(A) 150 VGS = 10V 10 TJ = 25oC 100 VGS = 4.5V TJ = 125oC 50 Limited by Package RJC = 1.2 C/W o 1 0.01 0.1 1 10 100 1000 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 400 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 100 ID, DRAIN CURRENT (A) 10 THIS AREA IS LIMITED BY rDS(on) 1ms 10ms 100 1 100ms 1s 10s DC 10 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125 C/W TA = 25oC o 1 0.5 -3 10 10 -2 0.01 0.01 0.1 1 10 100 200 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2008 Fairchild Semiconductor Corporation FDMS8460 Rev.C 4 www.fairchildsemi.com FDMS8460 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RJA = 125 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 -3 10 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDMS8460 Rev.C 5 www.fairchildsemi.com FDMS8460 N-Channel Power Trench(R) MOSFET Dimensional Outline and Pad Layout (c)2008 Fairchild Semiconductor Corporation FDMS8460 Rev.C 6 www.fairchildsemi.com FDMS8460 N-Channel Power Trench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c)2008 Fairchild Semiconductor Corporation FDMS8460 Rev.C 7 www.fairchildsemi.com |
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